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SI4500BDY-T1-GE3

MOSFET N/P-CH 20V 6.6A 8-SOIC

Manufacturer Vishay
MPN SI4500BDY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Package / Case 8-SOIC (0.154", 3.90mm Width)
-FET Feature Logic Level Gate
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.5V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 20 mOhm @ 9.1A, 4.5V
-Power - Max 1.3W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 17nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type N and P-Channel, Common Drain
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Cut Tape (CT)

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