SI1965DH-T1-E3

Si1965DH Series Dual P-Channel 12 V 390 mOhms Surface Mount Power Mosfet-SOT-363

制造商 Vishay 制造商零件编号 SI1965DH-T1-E3 标准包装 1 ECCN EAR99 Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
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产品参数

-Package / Case	6-TSSOP, SC-88, SOT-363
-FET Feature	Logic Level Gate
-Drain to Source Voltage (Vdss)	12V
-Current - Continuous Drain (Id) @ 25°C	1.3A
-Part Status	Active
-Manufacturer	Vishay Siliconix
-Series	TrenchFET®
-Vgs(th) (Max) @ Id	1V @ 250µA
-Operating Temperature	-55°C ~ 150°C (TJ)
-Packaging	Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs	390 mOhm @ 1A, 4.5V
-Power - Max	1.25W
-Supplier Device Package	SC-70-6 (SOT-363)
-Gate Charge (Qg) @ Vgs	4.2nC @ 8V
-Category	Discrete Semiconductor Products
-FET Type	2 P-Channel (Dual)
-Family	Transistors - FETs, MOSFETs - Arrays
-Mounting Type	Surface Mount
-Input Capacitance (Ciss) @ Vds	120pF @ 6V
-ECCN	EAR99