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SI1905BDH-T1-E3

MOSFET 2P-CH 8V 0.63A SC70-6

Manufacturer Vishay
MPN SI1905BDH-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SI1905BDH-T1-E3.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 8V
-Current - Continuous Drain (Id) @ 25°C 630mA
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 542 mOhm @ 580mA, 4.5V
-Power - Max 357mW
-Supplier Device Package SC-70-6 (SOT-363)
-Gate Charge (Qg) @ Vgs 1.5nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 P-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 62pF @ 4V

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