| -Product: |
MOSFET |
| -Rds On - Drain-Source Resistance: |
390 mOhms, 850 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Package / Case: |
SC-70-6 |
| -Configuration: |
1 N-Channel, 1 P-Channel |
| -Unit Weight: |
0.000988 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
16 ns, 15 ns |
| -Manufacturer: |
Vishay |
| -Transistor Polarity: |
N-Channel, P-Channel |
| -Channel Mode: |
Enhancement |
| -Part # Aliases: |
SI1553DL-T1-GE3 SI1555DL-T1-E3-S SI1563DH-T1-GE3 SI1563EDH-T1-GE3 |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
700 mA, - 500 mA |
| -Rise Time: |
22 ns, 15 ns |
| -Transistor Type: |
1 N-Channel, 1 P-Channel |
| -ECCN |
EAR99 |
| -Packaging: |
Reel |
| -Qg - Gate Charge: |
0.55 nC, 0.95 nC |
| -Pd - Power Dissipation: |
340 mW |
| -Tradename: |
TrenchFET |
| -Vgs th - Gate-Source Threshold Voltage: |
1.5 V, - 1.5 V |
| -Vgs - Gate-Source Voltage: |
12 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
13 ns, 8 ns |
| -Forward Transconductance - Min: |
1.5 S, 0.8 S |
| -Series: |
SI1 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
Vishay Semiconductors |
| -Typical Turn-Off Delay Time: |
22 ns, 12 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
20 V |
| -Type: |
TrenchFET Power MOSFET |
| -Maximum Operating Temperature: |
+ 150 C |
