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GB05MPS33-263

3300V 5A TO-263-7 SiC Schottky MPS™

制造商 GeneSiC Semiconductor
制造商零件编号 GB05MPS33-263
标准包装 1
ECCN --
Schedule B --
RoHS RoHS Compliant
规格说明书 GB05MPS33-263.pdf GB05MPS33-263.pdf

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产品参数

-Diode Type Silicon Carbide Schottky
-RoHS Lead free / RoHS Compliant
-ECCN Number EAR99
-Package / Case TO-263-7
-Configuration Single
-Current (IF) (Per Diode) 5 A
-Switching Speed (ts) < 10 ns
-Minimum Operating Temperature -55 ℃
-Unit Weight 1.45 g
-Series SiC Schottky MPS™
-HTS Code 8541.10.0080
-Mounting Style Surface Mount
-Packaging Tube
-Blocking Voltage (VR) 3300 V
-Reverse Recovery Time (trr) 0 ns
-Forward Voltage (VF) (Typical) (25°C) 1.5 V
-Maximum Operating Temperature 175℃
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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