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| -Width: | 5.97 mm |
| -Output Power: | 100 W |
| -Minimum Operating Temperature: | - 65 C |
| -Technology: | Si |
| -Height: | 5.08 mm |
| -Vgs - Gate-Source Voltage: | +/- 20 V |
| -Gain: | 14 dB at 860 MHz |
| -Forward Transconductance - Min: | 3 S |
| -Series: | SD56120 |
| -Factory Pack Quantity: | 20 |
| -Brand: | STMicroelectronics |
| -Product Category: | RF MOSFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: | 65 V |
| -Maximum Operating Temperature: | + 150 C |
| -Operating Frequency: | 1 GHz |
| -Packaging: | Tube |
| -Pd - Power Dissipation: | 217 W |
| -Package / Case: | M246 |
| -Configuration: | Dual |
| -Mounting Style: | SMD/SMT |
| -Length: | 29.08 mm |
| -Manufacturer: | STMicroelectronics |
| -Transistor Polarity: | N-Channel |
| -Channel Mode: | Enhancement |
| -RoHS: | Details |
| -Id - Continuous Drain Current: | 14 A |
| -Type: | RF Power MOSFET |
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