SCT2450KEC

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 7A; Idm: 25A; 85W

Manufacturer ROHM Semiconductor MPN SCT2450KEC SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet SCT2450KEC.pdf

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Product parameter

-Drain to Source Voltage (Vdss)	1200V (1.2kV)
-Mounting Type	Through Hole
-Package / Case	TO-247-3
-Input Capacitance (Ciss) @ Vds	463pF @ 800V
-Rds On (Max) @ Id, Vgs	585 mOhm @ 3A, 18V
-Vgs(th) (Max) @ Id	4V @ 900µA
-FET Feature	Silicon Carbide (SiC)
-Operating Temperature	175°C (TJ)
-Supplier Device Package	TO-247
-FET Type	MOSFET N-Channel, Metal Oxide
-Current - Continuous Drain (Id) @ 25°C	10A (Tc)
-Power - Max	85W
-Gate Charge (Qg) @ Vgs	27nC @ 18V