SCT2280KEC

N-Channel 180 W 1200 V 280 mOhm Flange Mount SiC Power Mosfet - TO-247-3

Manufacturer ROHM Semiconductor MPN SCT2280KEC SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet SCT2280KEC.pdf

SP1000 Dollar $11.02 RMB ￥91.52824 Stock type SP1000 Stock num 10 Stepped num price 1+ $11.02 10+ $9.96 20+ $9.50 30+ $8.25

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-Mounting Type	Through Hole
-FET Type	MOSFET N-Channel, Metal Oxide
-Rds On (Max) @ Id, Vgs	364 mOhm @ 4A, 18V
-FET Feature	Silicon Carbide (SiC)
-Gate Charge (Qg) @ Vgs	36nC @ 18V
-Package / Case	TO-247-3
-Drain to Source Voltage (Vdss)	1200V (1.2kV)
-Vgs(th) (Max) @ Id	4V @ 1.4mA
-Operating Temperature	175°C (TJ)
-Input Capacitance (Ciss) @ Vds	667pF @ 800V
-Power - Max	108W
-Supplier Device Package	TO-247