| -Packaging: |
Reel |
| -Product: |
MOSFET Small Signal |
| -Qg - Gate Charge: |
18 nC |
| -Pd - Power Dissipation: |
800 mW |
| -Package / Case: |
TUMT-3 |
| -Configuration: |
Single |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
120 ns |
| -Length: |
2 mm |
| -Manufacturer: |
ROHM Semiconductor |
| -Transistor Polarity: |
P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
210 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
- 12 V |
| -Transistor Type: |
1 P-Channel |
| -Operating Temperature |
150°C (TJ) |
| -FET Type |
P-Channel |
| -Gate Charge (Qg) (Max) @ Vgs |
18nC @ 4.5V |
| -Rds On (Max) @ Id, Vgs |
39 mOhm @ 3A, 4.5V |
| -Supplier Device Package |
TUMT3 |
| -Power Dissipation (Max) |
800mW (Ta) |
| -Technology |
MOSFET (Metal Oxide) |
| -Packaging |
Tape & Reel (TR) |
| -Current - Continuous Drain (Id) @ 25°C |
3A (Ta) |
| -Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
| -RoHS |
Lead free / RoHS Compliant |
| -Width: |
1.7 mm |
| -Rds On - Drain-Source Resistance: |
28 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Height: |
0.77 mm |
| -Vgs - Gate-Source Voltage: |
10 V |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
9 ns |
| -Forward Transconductance - Min: |
5 S |
| -Series: |
RZF030P01 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
ROHM Semiconductor |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
- 3 A |
| -Rise Time: |
40 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Categories |
Discrete Semiconductor Products |
| -Input Capacitance (Ciss) (Max) @ Vds |
1860pF @ 6V |
| -Mounting Type |
Surface Mount |
| -Vgs(th) (Max) @ Id |
1V @ 1mA |
| -Drain to Source Voltage (Vdss) |
12V |
| -Package / Case |
3-SMD, Flat Leads |
| -Manufacturer |
Rohm Semiconductor |
| -Part Status |
Active |
| -Vgs (Max) |
±10V |
| -ECCN |
EAR99 |
