| -FET 类型 |
MOSFET N 通道，金属氧化物 |
| -FET Type |
MOSFET N-Channel, Metal Oxide |
| -Drain to Source Voltage (Vdss) |
20V |
| -Rds On (Max) @ Id, Vgs |
43 mOhm @ 3.5A, 4.5V |
| -Gate Charge (Qg) @ Vgs |
5.7nC @ 4.5V |
| -Operating Temperature |
150°C (TJ) |
| -Package / Case |
6-SMD, Flat Leads |
| -Operating Temperature |
150°C (TJ) |
| -FET Type |
N-Channel |
| -Gate Charge (Qg) (Max) @ Vgs |
5.7nC @ 4.5V |
| -Rds On (Max) @ Id, Vgs |
43 mOhm @ 3.5A, 4.5V |
| -Supplier Device Package |
TUMT6 |
| -Power Dissipation (Max) |
320mW (Ta) |
| -Technology |
MOSFET (Metal Oxide) |
| -Packaging |
Tape & Reel (TR) |
| -Current - Continuous Drain (Id) @ 25°C |
3.5A (Ta) |
| -Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4.5V |
| -FET 功能 |
逻辑电平栅极，1.5V 驱动 |
| -FET Feature |
Logic Level Gate, 1.5V Drive |
| -Current - Continuous Drain (Id) @ 25°C |
3.5A (Ta) |
| -Vgs(th) (Max) @ Id |
1V @ 1mA |
| -Input Capacitance (Ciss) @ Vds |
460pF @ 10V |
| -Mounting Type |
Surface Mount |
| -Supplier Device Package |
TUMT6 |
| -Categories |
Discrete Semiconductor Products |
| -Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 10V |
| -Mounting Type |
Surface Mount |
| -Vgs(th) (Max) @ Id |
1V @ 1mA |
| -Drain to Source Voltage (Vdss) |
20V |
| -Package / Case |
6-SMD, Flat Leads |
| -Manufacturer |
Rohm Semiconductor |
| -Part Status |
Active |
| -Vgs (Max) |
±10V |
| -RoHS |
Lead free / RoHS Compliant |
