CED655

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CED655 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CED655.pdf

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Product parameter

-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	150V
-Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
-Pd	43W
-Supplier Device Package	TO-251
-Rds On (Max) @ Id, Vgs	35 mOhm @ 6A,2.5V
-Thermal Resistance @ Natural	3.5℃/W
-Configuration	Single