CEZ06R10SL

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEZ06R10SL SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CEZ06R10SL.pdf

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Product parameter

-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	100V
-Gate Charge (Qg) (Max) @ Vgs	22nC @ 5V
-Pd	62.5W
-Supplier Device Package	PR-PACK(5*6)
-Rds On (Max) @ Id, Vgs	13 mOhm @ 60A,4.5V
-Thermal Resistance @ Natural	2℃/W
-Configuration	Single