CEW60N55S

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEW60N55S SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CEW60N55S.pdf

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Product parameter

-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	550V
-Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
-Pd	357W
-Supplier Device Package	TO-247
-Rds On (Max) @ Id, Vgs	2.8 Ohm @ 4A,10V
-Thermal Resistance @ Natural	0.35℃/W
-Configuration	Single