CEB6185

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEB6185 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CEB6185.pdf

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Product parameter

-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-60V
-Gate Charge (Qg) (Max) @ Vgs	38nC @ 5V
-Pd	60W
-Supplier Device Package	TO-263
-Rds On (Max) @ Id, Vgs	7.5 mOhm @ 137A,10V
-Thermal Resistance @ Natural	2.1℃/W
-Configuration	Single