| -Package / Case |
SC-96 |
| -Operating Temperature |
150°C (TJ) |
| -Input Capacitance (Ciss) @ Vds |
140pF @ 25V |
| -Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| -Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
| -FET Type |
N-Channel |
| -Family |
FETs - Single |
| -Standard Package |
3,000 |
| -Datasheets |
RSR010N10 |
| -FET 功能 |
逻辑电平栅极，4V 驱动 |
| -Input Capacitance (Ciss) (Max) @ Vds |
140pF @ 25V |
| -Supplier Device Package |
TSMT3 |
| -Technology |
MOSFET (Metal Oxide) |
| -Part Status |
Active |
| -Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
| -RoHS |
Lead free / RoHS Compliant |
| -Mounting Type |
Surface Mount |
| -Power - Max |
540mW |
| -Gate Charge (Qg) @ Vgs |
3.5nC @ 5V |
| -Rds On (Max) @ Id, Vgs |
520 mOhm @ 1A, 10V |
| -Drain to Source Voltage (Vdss) |
100V |
| -Packaging |
Tape & Reel (TR) |
| -Category |
Discrete Semiconductor Products |
| -PCN Design/Specification |
TSMT Package Updates 24/Dec/2014 |
| -FET 类型 |
MOSFET N 通道，金属氧化物 |
| -Categories |
Discrete Semiconductor Products |
| -Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 5V |
| -Power Dissipation (Max) |
540mW (Ta) |
| -Manufacturer |
Rohm Semiconductor |
| -Vgs (Max) |
±20V |
| -ECCN |
EAR99 |
