CED08N6A

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CED08N6A SPQ 4000 ECCN -- Schedule B -- RoHS -- Datasheet CED08N6A.pdf

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Product parameter

-PackType	BOX
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	600V
-Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
-Pd	107W
-SDP	TO-251
-Supplier Device Package	TO-251
-Rds On (Max) @ Id, Vgs	42 mOhm @ 24A,4.5V
-Thermal Resistance @ Natural	1.4℃/W
-Configuration	Single