CEF08N8

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEF08N8 SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet CEF08N8.pdf

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Product parameter

-PackType	BOX
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	800V
-Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
-Pd	52W
-SDP	TO-220F
-Supplier Device Package	TO-220F
-Rds On (Max) @ Id, Vgs	450 mOhm @ 16A,10V
-Thermal Resistance @ Natural	2.4℃/W
-Configuration	Single