CEU4269

1 N-Channel, 1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU4269 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEU4269.pdf

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Product parameter

-SDP	TO-252
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	8.5 mOhm @ 108.5A,10V
-Thermal Resistance @ Natural	12℃/W
-Configuration	Dual
-FET Type	1 N-Channel, 1 P-Channel
-Drain to Source Voltage (Vdss)	-40V,40V
-Gate Charge (Qg) (Max) @ Vgs	20.5nC @ 10V
-Pd	10.4W