CEU02N9

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU02N9 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEU02N9.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	TO-252
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	55 mOhm @ 6.2A,2.5V
-Thermal Resistance @ Natural	2℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	900V
-Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
-Pd	75W