CEU16N10

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU16N10 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEU16N10.pdf

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Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	TO-252
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	3.7 mOhm @ 190A,10V
-Thermal Resistance @ Natural	3.5℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	100V
-Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
-Pd	43W