CED1210

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CED1210 SPQ 4000 ECCN -- Schedule B -- RoHS -- Datasheet CED1210.pdf

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Product parameter

-PackType	BOX
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	100V
-Gate Charge (Qg) (Max) @ Vgs	17nC @ 5V
-Pd	104W
-SDP	TO-251
-Supplier Device Package	TO-251
-Rds On (Max) @ Id, Vgs	1300 mOhm @ 7A,10V
-Thermal Resistance @ Natural	1.5℃/W
-Configuration	Single