CEZ3P08

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEZ3P08 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEZ3P08.pdf CEZ3P08.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	PR-Pack 3*3
-Supplier Device Package	PR-PACK(5*6)
-Rds On (Max) @ Id, Vgs	7.2 mOhm @ 110A,4.5V
-Thermal Resistance @ Natural	2.3℃/W
-Configuration	Single
-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-30V
-Gate Charge (Qg) (Max) @ Vgs	44nC @ 5V
-Pd	54.3W