CED5175

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CED5175 SPQ 4000 ECCN -- Schedule B -- RoHS -- Datasheet CED5175.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-PackType	BOX
-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-55V
-Gate Charge (Qg) (Max) @ Vgs	35nC @ 5V
-Pd	68W
-SDP	TO-251
-Supplier Device Package	TO-251
-Rds On (Max) @ Id, Vgs	7.5 mOhm @ 90A,4.5V
-Thermal Resistance @ Natural	1.9℃/W
-Configuration	Single