CEN2307A

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEN2307A SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet CEN2307A.pdf CEN2307A.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	SOT-23-T
-Supplier Device Package	SOT-23-T
-Rds On (Max) @ Id, Vgs	850 mOhm @ 10A,10V
-Thermal Resistance @ Natural	100℃/W
-Configuration	Single
-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-30V
-Gate Charge (Qg) (Max) @ Vgs	5nC @ 5V
-Pd	1.25W