CEB6086L

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEB6086L SPQ 800 ECCN -- Schedule B -- RoHS -- Datasheet CEB6086L.pdf

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Product parameter

-SDP	TO-263
-Supplier Device Package	TO-263
-Rds On (Max) @ Id, Vgs	130 mOhm @ 2.5A,4.5V
-Thermal Resistance @ Natural	2℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	60V
-Gate Charge (Qg) (Max) @ Vgs	33nC @ 5V
-Pd	75W