CEB04N7G

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEB04N7G SPQ 800 ECCN -- Schedule B -- RoHS -- Datasheet CEB04N7G.pdf CEB04N7G.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	TO-263
-Supplier Device Package	TO-263
-Rds On (Max) @ Id, Vgs	50 mOhm @ 6A,4.5V
-Thermal Resistance @ Natural	1.5℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	700V
-Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
-Pd	84W