CEP45N10

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEP45N10 SPQ 1000 ECCN -- Schedule B -- RoHS -- Datasheet CEP45N10.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-PackType	BOX
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	100V
-Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
-Pd	136W
-SDP	TO-220
-Supplier Device Package	TO-220
-Rds On (Max) @ Id, Vgs	280 mOhm @ 2.3A,5V
-Thermal Resistance @ Natural	1.1℃/W
-Configuration	Single