CED25N15L

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CED25N15L SPQ 4000 ECCN -- Schedule B -- RoHS -- Datasheet CED25N15L.pdf

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Product parameter

-PackType	BOX
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	150V
-Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
-Pd	83.3W
-SDP	TO-251
-Supplier Device Package	TO-251
-Rds On (Max) @ Id, Vgs	185 mOhm @ 11A,5V
-Thermal Resistance @ Natural	1.8℃/W
-Configuration	Single