CEZ3R05

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEZ3R05 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEZ3R05.pdf CEZ3R05.pdf

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Product parameter

-SDP	PR-Pack 3*3
-Supplier Device Package	PR-PACK(5*6)
-Rds On (Max) @ Id, Vgs	120 mOhm @ 3.4A,10V
-Thermal Resistance @ Natural	1.8℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	30V
-Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
-Pd	83W