CEB100N10L

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEB100N10L SPQ 800 ECCN -- Schedule B -- RoHS -- Datasheet CEB100N10L.pdf CEB100N10L.pdf

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Product parameter

-SDP	TO-263
-Supplier Device Package	TO-263
-Rds On (Max) @ Id, Vgs	13 mOhm @ 60A,4.5V
-Thermal Resistance @ Natural	1.2℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	100V
-Gate Charge (Qg) (Max) @ Vgs	23nC @ 5V
-Pd	125W