CEZ3R02

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEZ3R02 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEZ3R02.pdf CEZ3R02.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	PR-Pack 3*3
-Supplier Device Package	PR-PACK(5*6)
-Rds On (Max) @ Id, Vgs	110 mOhm @ 30A,10V
-Thermal Resistance @ Natural	1.5℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	30V
-Gate Charge (Qg) (Max) @ Vgs	49nC @ 5V
-Pd	83W