CEU2015

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU2015 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEU2015.pdf

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-SDP	TO-252
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	270 mOhm @ 2.2A,10V
-Thermal Resistance @ Natural	1.3℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	150V
-Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
-Pd	96.2W