CEZ3R04

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEZ3R04 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEZ3R04.pdf CEZ3R04.pdf

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Product parameter

-SDP	PR-Pack 3*3
-Supplier Device Package	PR-PACK(5*6)
-Rds On (Max) @ Id, Vgs	125 mOhm @ 16A,4.5V
-Thermal Resistance @ Natural	3.2℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	30V
-Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 5V
-Pd	39W