CEB630N

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEB630N SPQ 800 ECCN -- Schedule B -- RoHS -- Datasheet CEB630N.pdf

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Product parameter

-SDP	TO-263
-Supplier Device Package	TO-263
-Rds On (Max) @ Id, Vgs	320 mOhm @ 2A,10V
-Thermal Resistance @ Natural	1.6℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	200V
-Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
-Pd	78W