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CEH2351

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS
MPN CEH2351
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet CEH2351.pdf

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Product parameter

-SDP TSOP-6
-Supplier Device Package TSOP-6
-Rds On (Max) @ Id, Vgs 9.5 mOhm @ 75A,4.5V
-Thermal Resistance @ Natural 62.5℃/W
-Configuration Single
-FET Type 1 P-Channel
-Drain to Source Voltage (Vdss) -150V
-Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
-Pd 2W

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