CEC3833

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEC3833 SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet CEC3833.pdf

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Product parameter

-SDP	DFN 2*2
-Supplier Device Package	DFN3*3
-Rds On (Max) @ Id, Vgs	12.5 mOhm @ 9.5A,10V
-Thermal Resistance @ Natural	50℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	30V
-Gate Charge (Qg) (Max) @ Vgs	37nC @ 5V
-Pd	2.5W