CEU2215

1 N-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU2215 SPQ 2500 ECCN -- Schedule B -- RoHS -- Datasheet CEU2215.pdf

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Product parameter

-SDP	TO-252
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	19 mOhm @ 56A,10V
-Thermal Resistance @ Natural	1.5℃/W
-Configuration	Single
-FET Type	1 N-Channel
-Drain to Source Voltage (Vdss)	150V
-Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
-Pd	100W