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RFM03U3CT(TE12L)

MOSFET N-CH RF-CST3

Manufacturer Toshiba
MPN RFM03U3CT(TE12L)
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Output Power: 3 W
-Gain: 14.8 dB
-Manufacturer: Toshiba
-Pd - Power Dissipation: 7 W
-Factory Pack Quantity: 3000
-Brand: Toshiba
-Package / Case: RF-CST-3
-Id - Continuous Drain Current: 2.5 A
-Vds - Drain-Source Breakdown Voltage: 16 V
-Vgs - Gate-Source Voltage: 3 V
-Mounting Style: SMD/SMT
-Operating Frequency: 520 MHz
-Packaging: Reel
-Series: RFM03
-Transistor Polarity: N-Channel
-Technology: Si
-RoHS:  Details
-Product Category: RF MOSFET Transistors
-Vgs th - Gate-Source Threshold Voltage: 0.6 V
-Configuration: Single
-Type: RF Power MOSFET

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