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EMH59T2R

TRANS 2NPN PREBIAS 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMH59T2R
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet EMH59T2R.pdf EMH59T2R.pdf EMH59T2R.pdf
SP1027
Dollar $0.1364
RMB ¥1.13289
Stock type SP1027
Stock num 1600
Stepped
num price
356+ $0.1364
500+ $0.13578
1000+ $0.11052

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Product parameter

-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 70mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Supplier Device Package EMT6
-Package / Case SOT-563, SOT-666
-Part Status Active
-Current - Collector Cutoff (Max) 500nA
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1) 10 kOhms
-Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V

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