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EMD59T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMD59T2R
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet EMD59T2R.pdf EMD59T2R.pdf EMD59T2R.pdf
SP1027
Dollar $0.13346
RMB ¥1.10847
Stock type SP1027
Stock num 3361
Stepped
num price
878+ $0.13346
1000+ $0.12912
2500+ $0.12524
SP1028
Dollar $0.19995
RMB ¥1.66071
Stock type SP1028
Stock num 3361
Stepped
num price
1+ $0.19995
300+ $0.11935
500+ $0.1023
1000+ $0.08835
4000+ $0.0775
5000+ $0.0775
10000+ $0.0744
30000+ $0.0744

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Product parameter

-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Supplier Device Package EMT6
-Package / Case SOT-563, SOT-666
-Part Status Active
-Current - Collector Cutoff (Max) 500nA
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1) 10 kOhms
-Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V

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