English 简体中文 日本語

EMB11FHAT2R

TRANS 2PNP 100MA EMT6

Manufacturer ROHM Semiconductor
MPN EMB11FHAT2R
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet EMB11FHAT2R.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 100mA
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Series Automotive, AEC-Q101
-Package / Case SOT-563, SOT-666
-Part Status Active
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1) 10 kOhms
-Supplier Device Package EMT6
-Transistor Type 2 PNP Pre-Biased (Dual)
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

Copyright © 1997-2013 NetEase. All Rights Reserved.