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GC08MPS12-252

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2

Manufacturer GeneSiC Semiconductor
MPN GC08MPS12-252
SPQ 2500
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet GC08MPS12-252.pdf GC08MPS12-252.pdf

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Product parameter

-Diode Type Silicon Carbide Schottky
-RoHS Lead free / RoHS Compliant
-ECCN Number EAR99
-Package / Case TO-252-2
-Configuration Single
-Current (IF) (Per Diode) 7.5 A
-Switching Speed (ts) < 10 ns
-Minimum Operating Temperature -55 ℃
-Unit Weight 0.3 g
-Series SiC Schottky MPS™
-HTS Code 8541.10.0080
-Mounting Style Surface Mount
-Packaging Tape and Reel
-Blocking Voltage (VR) 1200 V
-Reverse Recovery Time (trr) 0 ns
-Forward Voltage (VF) (Typical) (25°C) 1.5 V
-Maximum Operating Temperature 175℃
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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