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RAL045P01TCR

RAL045P01TCR , P沟道 MOSFET 晶体管, 4.5 A, Vds=-12 V, 6针 TUMT封装

Manufacturer ROHM Semiconductor
MPN RAL045P01TCR
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet RAL045P01TCR.pdf

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Product parameter

-Package / Case 6-SMD, Flat Leads
-FET Feature Logic Level Gate, 1.5V Drive
-Drain to Source Voltage (Vdss) 12V
-Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
-Part Status Active
-Manufacturer Rohm Semiconductor
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 4200pF @ 6V
-Rds On (Max) @ Id, Vgs 30 mOhm @ 4.5A, 4.5V
-Power - Max 1W
-Supplier Device Package TUMT6
-Gate Charge (Qg) @ Vgs 40nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 1V @ 1mA
-Operating Temperature 150°C (TJ)
-Packaging Tape & Reel (TR)

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