RAL045P01TCR

RAL045P01TCR , P沟道 MOSFET 晶体管, 4.5 A, Vds=-12 V, 6针 TUMT封装

Manufacturer ROHM Semiconductor MPN RAL045P01TCR SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet RAL045P01TCR.pdf

SP1027 Dollar $0.3069 RMB ￥2.549 Stock type SP1027 Stock num 7795 Stepped num price 250+ $0.3069 500+ $0.24335 1000+ $0.2325 3000+ $0.23095 6000+ $0.20615 SP1028 Dollar $0.16585 RMB ￥1.37749 Stock type SP1028 Stock num 2245 Stepped num price 1+ $0.16585 10+ $0.1612 50+ $0.1581 100+ $0.155 500+ $0.155 1000+ $0.155 2000+ $0.155 4000+ $0.15345

Quote

Demand quantity		Target price
Contact number		name
company		email

Product parameter

-Package / Case	6-SMD, Flat Leads
-FET Feature	Logic Level Gate, 1.5V Drive
-Drain to Source Voltage (Vdss)	12V
-Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
-Part Status	Active
-Manufacturer	Rohm Semiconductor
-Family	Transistors - FETs, MOSFETs - Single
-Mounting Type	Surface Mount
-Input Capacitance (Ciss) @ Vds	4200pF @ 6V
-Rds On (Max) @ Id, Vgs	30 mOhm @ 4.5A, 4.5V
-Power - Max	1W
-Supplier Device Package	TUMT6
-Gate Charge (Qg) @ Vgs	40nC @ 4.5V
-Category	Discrete Semiconductor Products
-FET Type	MOSFET P-Channel, Metal Oxide
-Vgs(th) (Max) @ Id	1V @ 1mA
-Operating Temperature	150°C (TJ)
-Packaging	Tape & Reel (TR)