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R8002ANX

MOSFET N-CH 800V 2A TO-220FM

制造商 ROHM Semiconductor
制造商零件编号 R8002ANX
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 R8002ANX.pdf

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产品参数

-Package / Case TO-220-3 Full Pack
-FET Feature Standard
-Drain to Source Voltage (Vdss) 800V
-Current - Continuous Drain (Id) @ 25°C 2A (Tc)
-Part Status Active
-Manufacturer Rohm Semiconductor
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Through Hole
-Input Capacitance (Ciss) @ Vds 210pF @ 25V
-Rds On (Max) @ Id, Vgs 4.3 Ohm @ 1A, 10V
-Power - Max 35W
-Supplier Device Package TO-220FM
-Gate Charge (Qg) @ Vgs 12.7nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 5V @ 1mA
-Operating Temperature 150°C (TJ)
-Packaging Bulk

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