R6020FNX

MOSFET N-CH 600V 20A TO-220FM

制造商 ROHM Semiconductor 制造商零件编号 R6020FNX 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 R6020FNX.pdf

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Rds On - Drain-Source Resistance:	250 mOhms
-Number of Channels:	1 Channel
-Series:	R6020FNX
-Factory Pack Quantity:	500
-Brand:	ROHM Semiconductor
-Package / Case:	TO-220-3
-Id - Continuous Drain Current:	20 A
-Unit Weight:	0.211644 oz
-Mounting Style:	Through Hole
-Packaging:	Bulk
-Manufacturer:	ROHM Semiconductor
-Transistor Polarity:	N-Channel
-Technology:	Si
-RoHS:	Details
-Product Category:	MOSFET
-Vds - Drain-Source Breakdown Voltage:	600 V
-Transistor Type:	1 N-Channel