CEM4953

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEM4953 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CEM4953.pdf

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Product parameter

-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-30V
-Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
-Pd	2W
-Supplier Device Package	SO-8
-Rds On (Max) @ Id, Vgs	80 mOhm @ 4.8A,4.5V
-Thermal Resistance @ Natural	62.5℃/W
-Configuration	Dual