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QSE114

QSE114 Series 30 V 880 nm Through Hole Plastic Silicon Infrared Phototransistor

Manufacturer onsemi
MPN QSE114
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet QSE114.pdf

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Product parameter

-Width: 2.54 mm
-Fall Time: 8 us
-Length: 4.44 mm
-Peak Wavelength: 880 nm
-Pd - Power Dissipation: 100 mW
-Factory Pack Quantity: 500
-Brand: Fairchild Semiconductor
-Half Intensity Angle Degrees: 25 deg
-Product Category: Phototransistors
-Height: 5.08 mm
-Rise Time: 8 us
-Type: Photo Transistor
-ECCN EAR99
-Lens Color/Style: Black Transparent
-Packaging: Bulk
-Manufacturer: Fairchild Semiconductor
-Operating Supply Voltage: 5 V
-Minimum Operating Temperature: - 40 C
-Part # Aliases: QSE114_NL
-RoHS:  Details
-Package / Case: Side Looker
-Collector- Emitter Voltage VCEO Max: 30 V
-Dark Current: 100 nA
-Unit Weight: 0.004762 oz
-Maximum Operating Temperature: + 100 C

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