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QSB363

QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

Manufacturer onsemi
MPN QSB363
SPQ 1000
ECCN EAR99
Schedule B --
RoHS --
Datasheet QSB363.pdf

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Product parameter

-Lens Color/Style: Black
-Product: Phototransistors
-Packaging: Bulk
-Collector-Emitter Breakdown Voltage: 30 V
-Pd - Power Dissipation: 75 mW
-Package / Case: T-3/4
-Unit Weight: 0.003175 oz
-Fall Time: 15 us
-Manufacturer: Fairchild Semiconductor
-Factory Pack Quantity: 1000
-RoHS:  Details
-Collector- Emitter Voltage VCEO Max: 30 V
-Rise Time: 15 us
-Maximum Operating Temperature: + 85 C
-Collector-Emitter Saturation Voltage: 0.4 V
-Width: 2.2 mm
-Maximum On-State Collector Current: 1.5 mA
-Minimum Operating Temperature: - 40 C
-Half Intensity Angle Degrees: 24 deg
-Height: 3 mm
-Mounting Style: SMD/SMT
-Length: 2.7 mm
-Peak Wavelength: 940 nm
-Brand: Fairchild Semiconductor
-Product Category: Phototransistors
-Dark Current: 100 nA
-Wavelength: 940 nm
-ECCN EAR99

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