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QS8M12TCR

MOSFET N/P-CH 30V 4A TSMT8

Manufacturer ROHM Semiconductor
MPN QS8M12TCR
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet QS8M12TCR.pdf

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Product parameter

-Package / Case 8-SMD, Flat Lead
-FET Feature Logic Level Gate
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 4A
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 250pF @ 10V
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
-Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 5V
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Rds On (Max) @ Id, Vgs 42 mOhm @ 4A, 10V
-Power - Max 1.5W
-Supplier Device Package TSMT8
-Gate Charge (Qg) @ Vgs 3.4nC @ 5V
-Category Discrete Semiconductor Products
-FET Type N and P-Channel
-Vgs(th) (Max) @ Id 2.5V @ 1mA
-Operating Temperature 150°C (TJ)
-Packaging Cut Tape (CT)
-Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
-Lead Free Status / RoHS Status 1
-Base Part Number *M12

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