| -Qg - Gate Charge: |
120 nC |
| -Packaging: |
Reel |
| -Pd - Power Dissipation: |
1.5 W |
| -Package / Case: |
TSMT-8 |
| -Configuration: |
1 N-Channel |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
7 ns |
| -Manufacturer: |
ROHM Semiconductor |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
30 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
45 V |
| -Transistor Type: |
1 N-Channel |
| -Operating Temperature |
150°C (TJ) |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Mounting Type |
Surface Mount |
| -Rds On (Max) @ Id, Vgs |
53 mOhm @ 4A, 10V |
| -Supplier Device Package |
TSMT8 |
| -Package / Case |
8-SMD, Flat Lead |
| -Lead Free Status / RoHS Status |
1 |
| -RoHS |
Lead free / RoHS Compliant |
| -Rds On - Drain-Source Resistance: |
53 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
4 V |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
9 ns |
| -Series: |
QS8K21 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
ROHM Semiconductor |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
4 A |
| -Rise Time: |
25 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -FET Feature |
Logic Level Gate |
| -FET Type |
2 N-Channel (Dual) |
| -Input Capacitance (Ciss) (Max) @ Vds |
460pF @ 10V |
| -Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| -Drain to Source Voltage (Vdss) |
45V |
| -Current - Continuous Drain (Id) @ 25°C |
4A |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
